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STM32H750VB bảng dữ liệu(PDF) 120 Page - STMicroelectronics |
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STM32H750VB bảng dữ liệu(HTML) 120 Page - STMicroelectronics |
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120 / 335 page ![]() Electrical characteristics (rev Y) STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 120/334 DS12556 Rev 5 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 17. Typical application with a 32.768 kHz crystal 1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.9 Internal clock source characteristics The parameters given in Table 44 and Table 47 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 22: General operating conditions. 48 MHz high-speed internal RC oscillator (HSI48) 2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers. 3. tSU is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768k Hz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. ai17531c STM32 OSC32_OUT fHSE CL1 RF 32.768 kHz resonator Bias controlled gain OSC32_IN CL2 Resonator with integrated capacitors Table 44. HSI48 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI48 HSI48 frequency VDD=3.3 V, TJ=30 °C 47.5(1) 48 48.5(1) MHz TRIM(2) USER trimming step - - 0.17 - % USER TRIM COVERAGE(3) USER TRIMMING Coverage ± 32 steps - ±5.45 - % DuCy(HSI48)(2) Duty Cycle - 45 - 55 % ACCHSI48_REL(3) Accuracy of the HSI48 oscillator over temperature (factory calibrated) VDD=1.62 to 3.6 V, TJ=-40 to 125 °C –4.5 - 3.5 % ∆VDD(HSI48)(3) HSI48 oscillator frequency drift with VDD(4) VDD=3 to 3.6 V - 0.025 0.05 % VDD=1.62 V to 3.6 V - 0.05 0.1 tsu(HSI48)(2) HSI48 oscillator start-up time - - 2.1 3.5 µs IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA NT jitter Next transition jitter Accumulated jitter on 28 cycles(5) - - ± 0.15 - ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(5) - - ± 0.25 - ns |
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