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STM32H750VB bảng dữ liệu(PDF) 121 Page - STMicroelectronics

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DS12556 Rev 5
121/334
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
Electrical characteristics (rev Y)
311
64 MHz high-speed internal RC oscillator (HSI)
4 MHz low-power internal RC oscillator (CSI)
1. Guaranteed by test in production.
2. Guaranteed by design.
3. Guaranteed by characterization.
4. These values are obtained by using the formula:
(Freq(3.6V) - Freq(3.0V)) / Freq(3.0V) or (Freq(3.6V) - Freq(1.62V)) / Freq(1.62V).
5. Jitter measurements are performed without clock source activated in parallel.
Table 45. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
HSI frequency
VDD=3.3 V, TJ=30 °C
63.7(2)
64
64.3(2)
MHz
TRIM
HSI user trimming step
Trimming is not a multiple
of 32
-
0.24
0.32
%
Trimming is 128, 256 and
384
−5.2
−1.8
-
Trimming is 64, 192, 320
and 448
−1.4
−0.8
-
Other trimming are a
multiple of 32 (not
including multiple of 64
and 128)
−0.6
−0.25
-
DuCy(HSI) Duty Cycle
-
45
-
55
%
ΔVDD (HSI)
HSI oscillator frequency drift over
VDD (reference is 3.3 V)
VDD=1.62 to 3.6 V
−0.12
-
0.03
%
ΔTEMP (HSI)
HSI oscillator frequency drift over
temperature (reference is 64 MHz)
TJ=-20 to 105 °C
−1(3)
-1(3)
%
TJ=−40 to TJmax °C
−2(3)
-1(3)
tsu(HSI)
HSI oscillator start-up time
-
-
1.4
2
µs
tstab(HSI)
HSI oscillator stabilization time
at 1% of target frequency
-4
8
µs
IDD(HSI)
HSI oscillator power consumption
-
-
300
400
µA
1. Guaranteed by design unless otherwise specified.
2. Guaranteed by test in production.
3. Guaranteed by characterization.
Table 46. CSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fCSI
CSI frequency
VDD=3.3 V, TJ=30 °C
3.96(2)
44.04(2)
MHz
TRIM
Trimming step
-
-
0.35
-
%
DuCy(CSI)
Duty Cycle
-
45
-
55
%



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