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MMPF0200Z bảng dữ liệu(PDF) 62 Page - NXP Semiconductors |
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MMPF0200Z bảng dữ liệu(HTML) 62 Page - NXP Semiconductors |
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62 / 118 page ![]() Analog Integrated Circuit Device Data 62 Freescale Semiconductor PF0200Z Functional Block Requirements and Behaviors Power Generation Figure 17. SW3AB Single Phase Efficiency Waveforms SWITCH MODE SUPPLY SW3A/B (CONTINUED) SW3A N-MOSFET Leakage Current VIN = VINSW3A = 4.5 V ISW3ANQ –– 2.5 µA SW3B P-MOSFET RDS(on) at VIN = VINSW3B = 3.3 V RONSW3BP – 215 245 m SW3B N-MOSFET RDS(on) at VIN = VINSW3B = 3.3 V RONSW3BN – 258 326 m SW3B P-MOSFET Leakage Current VIN = VINSW3B = 4.5 V ISW3BPQ –– 7.5 µA SW3B N-MOSFET Leakage Current VIN = VINSW3B = 4.5 V ISW3BPQ –– 2.5 µA Discharge Resistance RSW3xDIS – 600 – Notes 45. When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V. 46. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW3x - VSW3x) = ISW3x* (DCR of Inductor +RONSW3xP + PCB trace resistance). Table 71. SW3A/B Electrical Characteristics (continued) All parameters are specified at TA = -40 to 85 °C, VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], typical external component values, fSW3x = 2.0 MHz, single phase and independent mode unless, otherwise noted. Typical values are characterized at VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. P arameter Symbol Min Typ Max Unit 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 Ef fi ci e n cy (% ) Load Current (mA) PFM ‐ Vout = 1.5V APS ‐ Vout = 1.5V PWM ‐ Vout = 1.5V |
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