2 GHz to 28 GHz, GaAs,

pHEMT, MMIC Low Noise Amplifier

Data Sheet

ADL9006

Rev. 0

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FEATURES

P1dB: 20 dBm typical at 2 GHz to 6 GHz

Gain: 15.5 dB typical at 6 GHz to 28 GHz

Noise figure: 2.5 dB typical at 2 GHz to 20 GHz

OIP3: 26 dBm typical at 2 GHz to 6 GHz

Supply voltage: 5 V at 53 mA

50 Ω matched input and output

APPLICATIONS

Test instrumentation

Military and space

Local oscillator driver amp

FUNCTIONAL BLOCK DIAGRAM

17

1

3

4

2

GND

VGG2

GND

6

RFIN

NIC

7

NIC

8

GND

GND

20

RFOUT

21

GND

ADL9006

PACKAGE

BASE

Figure 1.

GENERAL DESCRIPTION

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic microwave

integrated circuit (MMIC), low noise amplifier that operates

between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of

gain, 2.5 dB noise figure, 26 dBm output third-order intercept

(OIP3), and 20 dBm of output power for 1 dB compression

(P1dB) while requiring 53 mA from a 5 V supply. The ADL9006

is self biased with only a single positive supply needed to

The ADL9006 amplifier input and output are internally

matched to 50 Ω.