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2EDF7275K bảng dữ liệu(PDF) 17 Page - Infineon Technologies AG

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Giải thích chi tiết về linh kiện  Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate-driver
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nhà sản xuất  INFINEON [Infineon Technologies AG]
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Final datasheet
17
Rev.2.5
2020-03-17
EiceDRIVER™ 2EDi product family
2EDSx reinforced, 2EDFx functional isolated 4A/8A, 1A/2A gate drivers
Device characteristics
Table 11
Undervoltage Lockout VDDA, VDDB 13 V-versions for SiC MOSFETs (see Figure 13)
Parameter
Symbol
Values
Unit Note or
Test Condition
Min.
Typ.
Max.
Undervoltage Lockout (UVLO) turn-on
threshold VDDA, VDDB
UVLO_
CMon
13.0
13.7
14.2
V
–
Undervoltage Lockout (UVLO) turn-off
threshold VDDA, VDDB
UVLO_
CMoff
–
12.9
–
V
–
UVLO threshold hysteresis VDDA, VDDB
UVLO_
CMhys
0.4
0.8
1.2
V
–
Table 12
Undervoltage Lockout VDDA, VDDB 8 V-versions for standard MOSFETs (see Figure 12)
Parameter
Symbol
Values
Unit
Note or
Test Condition
Min.
Typ.
Max.
Undervoltage Lockout (UVLO) turn-on
threshold VDDA, VDDB
UVLO_
CMon
7.6
8.0
8.4
V
–
Undervoltage Lockout (UVLO) turn-off
threshold VDDA, VDDB
UVLO_
CMoff
–7.0
–
V
–
UVLO threshold hysteresis VDDA,
VDDB
UVLO_
CMhys
0.711.3
V
–
Table 13
Undervoltage Lockout VDDA, VDDB 4 V-versions for logic-level MOSFETs (see Figure 12)
Parameter
Symbol
Values
Unit Note or
Test Condition
Min.
Typ.
Max.
Undervoltage Lockout (UVLO) turn on
threshold VDDA, VDDB
UVLO_
CMon
4.0
4.2
4.4
V
–
Undervoltage Lockout (UVLO) turn off
threshold VDDA, VDDB
UVLO_
CMoff
–3.9
–
V
–
UVLO threshold hysteresis
VDDA, VDDB
UVLO_
CMhys
0.2
0.3
0.4
V
–
Table 14
Logic inputs INA, INB and DISABLE (see Figure 11)
Parameter
Symbol
Values
Unit Note or
Test Condition
Min.
Typ.
Max.
Input voltage threshold for transition
LH
VINH
1.7
2.0
2.3
V
–
Input voltage threshold for transition
HL
VINL
–1.2
–
V
–
Input voltage threshold hysteresis
VIN_hys
0.4
0.8
1.2
V
–
Input pull-down resistor
RIN
–
150
–
kΩ
–



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