56F802 datasheet(20/40 Pages) FREESCALE

20 / 40 page

56F802 Technical Data, Rev. 7

Freescale Semiconductor

Table 3-6 IFREN Truth Table

Mode

IFREN = 1

IFREN = 0

Read

Read information block

Read main memory block

Word program

Program information block

Program main memory block

Page erase

Erase information block

Erase main memory block

Mass erase

Erase both blocks

Erase main memory block

Table 3-7 Flash Timing Parameters

Operating Conditions: VSS = VSSA = 0 V, VDD = VDDA = 3.0–3.6V, TA = –40° to +85°C, CL ≤ 50pF

Characteristic

Symbol

Min

Typ

Max

Unit

Figure

Program time

Tprog*

–

Figure 3-4

Erase time

Terase*

–

Figure 3-5

Mass erase time

Tme*

100

–

Figure 3-6

Endurance1

1. One Cycle is equal to an erase program and read.

ECYC

10,000

20,000

–

cycles

Data Retention1 @ 5000 cycles

DRET

–

years

The following parameters should only be used in the Manual Word Programming Mode

PROG/ERASE to NVSTR set

up time

Tnvs*

–

Figure 3-4,

Figure 3-5,

Figure 3-6

NVSTR hold time

Tnvh*

–

Figure 3-4,

Figure 3-5

NVSTR hold time (mass erase)

Tnvh1*

–

100

–

Figure 3-6

NVSTR to program set up time

Tpgs*

–

Figure 3-4

Recovery time

Trcv*

–

Figure 3-4,

Figure 3-5,

Figure 3-6

Cumulative program

HV period2

Thv

–

Figure 3-4

Program hold time3

Tpgh

–

Figure 3-4

Address/data set up time3

Tads

–

Figure 3-4

Address/data hold time3

Tadh

–

Figure 3-4

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