HY27SF161G2M-VIP datasheet(3/48 Pages) HYNIX

3 / 48 page

Rev 0.7 / Apr. 2005

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

- Cost effective solutions for mass storage applications

NAND INTERFACE

- x8 or x16 bus width.

- Multiplexed Address/ Data

- Pinout compatibility for all densities

SUPPLY VOLTAGE

- 3.3V device: VCC = 2.7 to 3.6V

: HY27UFXX1G2M

- 1.8V device: VCC = 1.7 to 1.95V : HY27SFXX1G2M

Memory Cell Array

= (2K+ 64) Bytes x 64 Pages x 1,024 Blocks

= (1K+32) Words x 64 pages x 1,024 Blocks

PAGE SIZE

- x8 device : (2K + 64 spare) Bytes

: HY27(U/S)F081G2M

- x16 device: (1K + 32 spare) Words

: HY27(U/S)F161G2M

BLOCK SIZE

- x8 device: (128K + 4K spare) Bytes

- x16 device: (64K + 2K spare) Words

PAGE READ / PROGRAM

- Random access: 27us(1) (max.)

- Sequential access: 60ns(1) (min.)

- Page program time: 300us (typ.)

COPY BACK PROGRAM MODE

- Fast page copy without external buffering

CACHE PROGRAM MODE

- Internal Cache Register to improve the program

throughput

FAST BLOCK ERASE

- Block erase time: 2ms (Typ.)

STATUS REGISTER

ELECTRONIC SIGNATURE

- Manufacturer Code

- Device Code

CHIP ENABLE DON'T CARE OPTION

- Simple interface with microcontroller

AUTOMATIC PAGE 0 READ AT POWER-UP OPTION

- Boot from NAND support

- Automatic Memory Download

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION

- Program/Erase locked during Power transitions

DATA INTEGRITY

- 100,000 Program/Erase cycles

- 10 years Data Retention

PACKAGE

- HY27(U/S)F(08/16)1G2M-T(P)

: 48-Pin TSOP1 (12 x 20 x 1.2 mm)

- HY27(U/S)F(08/16)1G2M-T (Lead)

- HY27(U/S)F(08/16)1G2M-TP (Lead Free)

- HY27(U/S)F(08/16)1G2M-V(P)

: 48-Pin WSOP1 (12 x 17 x 0.7 mm)

- HY27(U/S)F(08/16)1G2M-V (Lead)

- HY27(U/S)F(08/16)1G2M-VP (Lead Free)

- HY27(U/S)F(08/16)1G2M-F(P)

: 63-Ball FBGA (9.5 x 12 x 1.0 mm)

- HY27(U/S)F(08/16)1G2M-F (Lead)

- HY27(U/S)F(08/16)1G2M-FP (Lead Free)

NOTE:

1. These parameters are applied to the errata.

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