4

OPA818

SBOS940 – MAY 2019

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Copyright © 2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Long-term continuous current for electromigration limits.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

13.5

V

Voltage

Differential input voltage

±5

V

Common-mode input voltage

V

Current

Continuous input current

±10

mA

45

13

mA

Temperature

105

°C

–40

85

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per

±TBD

V

Charged device model (CDM), per JEDEC

±TBD

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Single-supply voltage

6

10

13

V

Ambient temperature

–40

25

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

OPA818

UNIT

DRG (SON)

8 PINS

Junction-to-ambient thermal resistance

54.6

°C/W

Junction-to-case (top) thermal resistance

56.0

°C/W

Junction-to-board thermal resistance

27.2

°C/W

Junction-to-top characterization parameter

1.8

°C/W

Junction-to-board characterization parameter

27.2

°C/W

Junction-to-case (bottom) thermal resistance

11.1

°C/W