WNM3032 datasheet(3/8 Pages) WILLSEMI

tên linh kiện	WNM3032

Giải thích chi tiết về linh kiện	Single N-Channel, 30V, 9.6A , Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	WILLSEMI [Will Semiconductor Ltd.]

Trang chủ	http://www.willsemi.com/index.php?siteid=2

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3 / 8 page

WNM3032

Will Semiconductor Ltd.

Electronics Characteristics (Ta=25oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250uA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0V

Gate-to-source Leakage Current

IGSS

VDS = 0 V, VGS = ±20V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250uA

1.0

1.4

2.0

Drain-to-source On-resistance

RDS(on)

VGS = 10V, ID = 10A

8.5

mΩ

VGS = 4.5V, ID = 8A

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, F = 1.0 MHz, VDS =

15 V

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 15 V,

ID = 10A

Threshold Gate Charge

QG(TH)

Gate-to-Source Charge

QGS

Gate-to-Drain Charge

QGD

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

RG= 3 Ω,RL= 0.75Ω

Rise Time

Turn-Off Delay Time

td(OFF)

Fall Time

BODY DIODE CHARACTERISTICS

Forward Voltage

VSD

VGS = 0 V, IS = 1A

0.7

1.2

1375

271

233

28.9

1.3

4.3

5.48

13.8

10.2

63.2

12.4

0.5

2018 - Rev.1.1

Jul.

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