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HT66F019 bảng dữ liệu(PDF) 16 Page - Holtek Semiconductor Inc

tên linh kiện HT66F019
Giải thích chi tiết về linh kiện  A/D Flash MCU with EEPROM
PDF  175 Pages
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nhà sản xuất  HOLTEK [Holtek Semiconductor Inc]
Trang chủ  http://www.holtek.com
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Rev. 1.00
16
De�e��e� 01� �01�
Rev. 1.00
1�
De�e��e� 01� �01�
HT66F019
A/D Flash MCU with EEPROM
HT66F019
A/D Flash MCU with EEPROM
Input/Output Characteristics
Ta = 25˚C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Conditions
VIL
Input Low Voltage fo� I/O Po�ts o� Input
Pins
5V
—
0
—
1.5
V
—
0
—
0.�VDD
VIH
Input High Voltage fo� I/O Po�ts o�
Input Pins
5V
—
3.5
—
5.0
V
—
0.8VDD
—
VDD
IOL
Sink Cu��ent fo� I/O Pins
3V
VOL = 0.1VDD
16
3�
—
�A
5V
3�
64
—
IOH
Po�t Sou��e Cu��ent fo� I/O Pins
3V
VOH = 0.9VDD
-5.5
-11
—
�A
5V
-11
-��
—
RPH
Pull-high Resistan�e fo� I/O Po�ts (Note)
3V
—
�0
60
100
kΩ
5V
10
30
50
tTCK
TM TCK Input Pin Mini�u� Pulse
Width
—
—
0.3
—
—
μs
tINT
Inte��upt Input Pin Mini�u� Pulse
Width
—
—
10
—
—
μs
Note:TheRPHinternalpullhighresistancevalueiscalculatedbyconnectingtogroundandenablingtheinputpin
withapull-highresistorandthenmeasuringtheinputsinkcurrentatthespecifiedsupplyvoltagelevel.
DividingthevoltagebythismeasuredcurrentprovidestheRPHvalue.
Memory Characteristics
Ta = -40˚C~85˚C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Conditions
VRW
VDD fo� Read / W�ite
—
—
VDD�in
—
VDD�ax
V
Flash Program / Data EEPROM Memory
tDEW
E�ase / W�ite Cy�le Ti�e – Flash
P�og�a� Me�o�y
—
—
—
�
3
�s
W�ite Cy�le Ti�e – Data EEPROM
Me�o�y
—
—
—
4
6
�s
IDDPGM
P�og�a��ing / E�ase Cu��ent on VDD —
—
—
—
5.0
�A
EP
Cell Endu�an�e
—
—
100K
—
—
E/W
tRETD
ROM Data Retention Ti�e
— Ta = 25˚C
—
40
—
Yea�
RAM Data Memory
VDR
RAM Data Retention Voltage
— Devi�e in SLEEP Mode
1.0
—
—
V



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