5

TUSB564

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SLLSF29A – OCTOBER 2017 – REVISED OCTOBER 2017

Product Folder Links: TUSB564

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature and voltage range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply Voltage Range

-0.3

4

V

Differential Voltage at Differential Inputs

±2.5

V

Input Voltage at Differential Inputs

-0.5

4

V

Input Voltage at CMOS Inputs

-0.3

4

V

Storage temperature

-65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per

±5000

V

Charged device model (CDM), per JEDEC

±1500

6.3 Recommended Operating Conditions

over operating free-air temperature and voltage range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Ambient temperature for TUSB564

0

70

°C

Ambient temperature for TUSB564I

-40

85

°C

Supply voltage

3

3.3

3.6

V

Power supply ramp

0.1

100

ms

Supply that external resistors on SDA and SCL are pulled up to

1.7

3.6

V

Power supply noise on VCC

100

mV

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

TUSB564

UNIT

RNQ (WQFN)

40 PINS

Junction-to-ambient thermal resistance

37.6

°C/W

Junction-to-case (top) thermal resistance

20.7

°C/W

Junction-to-board thermal resistance

9.5

°C/W

Junction-to-top characterization parameter

0.2

°C/W

Junction-to-board characterization parameter

9.4

°C/W

Junction-to-case (bottom) thermal resistance

2.3

°C/W