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STM32F358XC bảng dữ liệu(PDF) 116 Page - STMicroelectronics

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STM32F358XC bảng dữ liệu(HTML) 116 Page - STMicroelectronics

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Electrical characteristics
STM32F358xC
116/134
DocID025540 Rev 4
PGA gain
Non inverting gain value
-
-2
-
-
-4
-
-
-8
-
-
-16
-
-
Rnetwork
R2/R1 internal resistance values in
PGA mode (2)
Gain=2
-
5.4/5.4
-
k
Ω
Gain=4
-
16.2/5.4
-
Gain=8
-
37.8/5.4
-
Gain=16
-
40.5/2.7
-
PGA gain error PGA gain error
-
-1%
-
1%
Ibias
OPAMP input bias current
-
-
-
±0.2(3)
µA
PGA BW
PGA bandwidth for different non
inverting gain
PGA Gain = 2,
Cload = 50pF,
Rload = 4 K
Ω
-4
-
MHz
PGA Gain = 4,
Cload = 50pF,
Rload = 4 K
Ω
-2
-
PGA Gain = 8,
Cload = 50pF,
Rload = 4 K
Ω
-1
-
PGA Gain = 16,
Cload = 50pF,
Rload = 4 K
Ω
-0.5
-
en
Voltage noise density
@ 1KHz, Output
loaded with
4 K
Ω
-109
-
@ 10KHz,
Output loaded
with 4 K
Ω
-43
-
1. Guaranteed by design, not tested in production.
2. R2 is the internal resistance between OPAMP output and OPAMP inverting input.
R1 is the internal resistance between OPAMP inverting input and ground.
The PGA gain =1+R2/R1
3. Mostly TTa I/O leakage, when used in analog mode.
Table 73. Operational amplifier characteristics(1) (continued)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
nV
Hz
-----------



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