STM32F358XC datasheet(76/134 Pages) STMICROELECTRONICS

76 / 134 page

Electrical characteristics

STM32F358xC

76/134

DocID025540 Rev 4

6.3.7

Internal clock source characteristics

The parameters given in Table 42 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 24.

High-speed internal (HSI) RC oscillator

Figure 17. HSI oscillator accuracy characterization results for soldered parts

Table 42. HSI oscillator characteristics(1)

1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

TRIM

HSI user trimming step

1(2)

2. Guaranteed by design, not tested in production.

DuCy(HSI)

Duty cycle

45(2)

-55(2)

ACCHSI

Accuracy of the HSI oscillator

TA = -40 to

105°C

-2.8(3)

3. Data based on characterization results, not tested in production.

-3.8(3)

TA = -10 to 85°C -1.9(3)

-2.3(3)

TA = 0 to 85°C

-1.9(3)

-2(3)

TA = 0 to 70°C

-1.3(3)

-2(3)

TA = 0 to 55°C

-1(3)

-2(3)

TA = 25°C(4)

4. Factory calibrated, parts not soldered.

-1

tsu(HSI)

HSI oscillator startup time

1(2)

-2(2)

µs

IDDA(HSI)

HSI oscillator power

consumption

100(2)

µA

STM32F358XC bảng dữ liệu(PDF) 76 Page - STMicroelectronics

STM32F358XC bảng dữ liệu(HTML) 76 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

bảng dữ liệu tải về

Link URL