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A5975AD bảng dữ liệu(PDF) 27 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Voltage feed-forward
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A5975AD bảng dữ liệu(HTML) 27 Page - STMicroelectronics

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A5975AD
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Doc ID 018761 Rev 1
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Figure 13.
Layout example
8.3
Thermal considerations
8.3.1
Thermal resistance RTHJ-A
RTHJ-A is the equivalent static thermal resistance junction-to-ambient of the device; it can be
calculated as the parallel of many paths of heat conduction from the junction to the ambient.
For this device, the path through the exposed pad is the one conducting the largest amount
of heat. The static RTHJ-A measured on the application is about 40 °C/W.
The junction temperature of the device is:
Equation 22
The dissipated power of the device is tied to three different sources:
Conduction losses due to the not insignificant RDS(on), which are equal to:
Equation 23
where D is the duty cycle of the application. Note that the duty cycle is theoretically given by
the ratio between VOUT and VIN, but in practice it is substantially higher than this value to
compensate for the losses in the overall application. For this reason, the switching losses
related to the RDS(on) increases compared to an ideal case.
T
J
T
A
R
thJA
P
TOT
⋅
+
=
P
ON
R
DS on
()
I
OUT
()
⋅
2
D
⋅
=



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