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STGWA15H120DF2 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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STGW15H120DF2, STGWA15H120DF2
Electrical characteristics
18
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
-23
-
ns
tr
Current rise time
-
7.4
-
ns
(di/dt)on
Turn-on current slope
-
1621
-
A/µs
td(off)
Turn-off delay time
111
-
ns
tf
Current fall time
-
111
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode.
Turn-on switching losses
-
0.38
-
mJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
0.37
-
mJ
Ets
Total switching losses
-
0.75
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
-
23.5
-
ns
tr
Current rise time
-
8
-
ns
(di/dt)on
Turn-on current slope
-
1525
-
A/µs
td(off)
Turn-off delay time
-
118
-
ns
tf
Current fall time
-
253
-
ns
Eon
(1)
Turn-on switching losses
-
0.65
-
mJ
Eoff
(2)
Turn-off switching losses
-
0.93
-
mJ
Ets
Total switching losses
-
1.58
-
mJ
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
5-
µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 15 A, VR = 600 V,
di/dt=1000 A/µs
,
VGE = 15 V,
see Figure 28
-231
-
ns
Qrr
Reverse recovery charge
-
0.72
-
µC
Irrm
Reverse recovery current
-
14.5
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-1200
-
A/µs
Err
Reverse recovery energy
-
0.4
-
mJ
trr
Reverse recovery time
IF = 15 A, VR = 600 V,
di/dt=1000 A/µs
,
VGE = 15 V, TJ = 175 °C,
see Figure 28
-414
-
ns
Qrr
Reverse recovery charge
-
2.2
-
µC
Irrm
Reverse recovery current
-
21.5
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-632
-
A/µs
Err
Reverse recovery energy
-
1.3
-
mJ



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