STGWA15H120DF2 datasheet(4/18 Pages) STMICROELECTRONICS

tên linh kiện	STGWA15H120DF2

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

PDF	18 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGW15H120DF2, STGWA15H120DF2

4/18

DocID023751 Rev 5

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

1200

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 15 A

2.1

2.6

VGE = 15 V, IC = 15 A

TJ = 125 °C

2.4

VGE = 15 V, IC = 15 A

TJ = 175 °C

2.5

Forward on-voltage

IF = 15 A

3.5

4.4

IF = 15 A, TJ = 125 °C

2.6

IF = 15 A, TJ = 175 °C

2.2

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500 µA

ICES

Collector cut-off current

(VGE = 0)

VCE = 1200 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-1300

Coes

Output capacitance

105

Cres

Reverse transfer

capacitance

-32

Total gate charge

VCC = 960 V, IC = 15 A,

VGE = 15 V, see Figure 29

-67

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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