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STM32F411RET6 bảng dữ liệu(PDF) 120 Page - STMicroelectronics

tên linh kiện STM32F411RET6
Giải thích chi tiết về linh kiện  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
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STM32F411RET6 bảng dữ liệu(HTML) 120 Page - STMicroelectronics

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Electrical characteristics
STM32F411xC STM32F411xE
120/149
DocID026289 Rev 6
6.3.22
VBAT monitoring characteristics
6.3.23
Embedded reference voltage
The parameters given in Table 74 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.
Table 73. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 74. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
- 40 °C < TA < + 125 °C 1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV
TCoeff(2)
Temperature coefficient
-
-
30
50
ppm/°C
tSTART(2)
Startup time
-
-
6
10
µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
Table 75. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL
Raw data acquired at temperature of
30 °C VDDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B



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