STM32F411RET6 datasheet(63/149 Pages) STMICROELECTRONICS

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STM32F411xC STM32F411xE

Electrical characteristics

123

Power dissipation at

TA = 125 °C (range 3)(7)

UFQFPN48

156

WLCSP49

LQFP64

106

LQFP100

116

UFBGA100

Ambient temperature for

range 6

Maximum power dissipation

- 40

°C

Low power dissipation(8)

- 40

105

Ambient temperature for

range 7

Maximum power dissipation

- 40

105

Low power dissipation(8)

- 40

125

Ambient temperature for

range 3

Maximum power dissipation

- 40

110

Low power dissipation(8)

- 40

130

Junction temperature range

Range 6

- 40

105

Range 7

- 40

125

Range 3

- 40

130

1. VDD/VDDA minimum value of 1.7 V with the use of an external power supply supervisor (refer to Section 3.15.2: Internal

reset OFF).

2. When the ADC is used, refer to Table 65: ADC characteristics.

3. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.

4. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and

VDDA can be tolerated during power-up and power-down operation.

5. Guaranteed by test in production.

6. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled

7. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.

8. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

Table 14. General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 15. Features depending on the operating power supply range

Operating

power

supply

range

ADC

operation

Maximum

Flash

memory

access

frequency

with no wait

states

(fFlashmax)

Maximum Flash

memory access

frequency with

wait states (1)(2)

I/O operation

Clock output

frequency on

I/O pins(3)

Possible

Flash

memory

operations

VDD =1.7 to

2.1 V(4)

Conversion

time up to

1.2 Msps

16 MHz(5)

100 MHz with 6

wait states

– No I/O

compensation

up to 30 MHz

8-bit erase

and program

operations

only

VDD = 2.1 to

2.4 V

Conversion

time up to

1.2 Msps

18 MHz

100 MHz with 5

wait states

– No I/O

compensation

up to 30 MHz

16-bit erase

and program

operations

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