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STM32F411RET6 bảng dữ liệu(PDF) 66 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
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STM32F411RET6 bảng dữ liệu(HTML) 66 Page - STMicroelectronics

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Electrical characteristics
STM32F411xC STM32F411xE
66/149
DocID026289 Rev 6
6.3.5
Embedded reset and power control block characteristics
The parameters given in Table 19 are derived from tests performed under ambient
temperature and VDD supply voltage @ 3.3V.
Table 19. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling edge)
1.98
2.04
2.08
PLS[2:0]=001 (rising edge)
2.23
2.30
2.37
PLS[2:0]=001 (falling edge)
2.13
2.19
2.25
PLS[2:0]=010 (rising edge)
2.39
2.45
2.51
PLS[2:0]=010 (falling edge)
2.29
2.35
2.39
PLS[2:0]=011 (rising edge)
2.54
2.60
2.65
PLS[2:0]=011 (falling edge)
2.44
2.51
2.56
PLS[2:0]=100 (rising edge)
2.70
2.76
2.82
PLS[2:0]=100 (falling edge)
2.59
2.66
2.71
PLS[2:0]=101 (rising edge)
2.86
2.93
2.99
PLS[2:0]=101 (falling edge)
2.77
2.82
2.89
PLS[2:0]=110 (rising edge)
2.96
3.03
3.10
PLS[2:0]=110 (falling edge)
2.85
2.93
2.99
PLS[2:0]=111 (rising edge)
3.07
3.14
3.21
PLS[2:0]=111 (falling edge)
2.95
3.03
3.09
VPVDhyst(2) PVD hysteresis
-
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60(1) 1.68
1.76
V
Rising edge
1.64
1.72
1.80
VPDRhyst(2) PDR hysteresis
-
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
Rising edge
2.53
2.59
2.63
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
Rising edge
2.85
2.92
2.97
VBORhyst(2) BOR hysteresis
-
-
100
-
mV
TRSTTEMPO
(2)(3)
POR reset timing
-
0.5
1.5
3.0
ms



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