STM32F411RET6 datasheet(93/149 Pages) STMICROELECTRONICS

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STM32F411xC STM32F411xE

Electrical characteristics

123

Table 47. Flash memory endurance and data retention

6.3.13

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 49. They are based on the EMS levels and classes

defined in application note AN1709.

Vprog

Programming voltage

2.7

3.6

VPP

VPP voltage range

IPP

Minimum current sunk on

the VPP pin

tVPP(3)

Cumulative time during

which VPP is applied

hour

1. Guaranteed by design.

2. The maximum programming time is measured after 100K erase operations.

3. VPP should only be connected during programming/erasing.

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results.

NEND

Endurance

TA = - 40 to + 85 °C (temp. range 6)

TA = - 40 to + 105 °C (temp. range 7)

TA = - 40 to + 125 °C (temp. range 3)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycle(2) at TA = 55 °C

Table 46. Flash memory programming with VPP voltage (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1) Unit

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