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STM32F411CE bảng dữ liệu(PDF) 86 Page - STMicroelectronics

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STM32F411CE bảng dữ liệu(HTML) 86 Page - STMicroelectronics

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Electrical characteristics
STM32F411xC STM32F411xE
86/149
DocID026289 Rev 6
Figure 25. Typical application with a 32.768 kHz crystal
6.3.9
Internal clock source characteristics
The parameters given in Table 39 and Table 40 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
L
Table 39. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = - 40 to 125 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
16
-
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2. Guaranteed by design.
--
1
%
Factory-
calibrated
TA = - 40 to 125 °C(3)
3. Guaranteed by characterization results.
- 8
-
5.5
TA = - 40 to 105 °C(3)
- 8
-
4.5
%
TA = - 10 to 85 °C(3)
- 4
-
4
%
TA = 25 °C(4)
4. Factory calibrated non-soldered parts.
- 1
-
1
%
tsu(HSI)(2)
HSI oscillator
startup time
-2.2
4
µs
IDD(HSI)(2)
HSI oscillator
power consumption
-60
80
µA



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