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STM32F411CE bảng dữ liệu(PDF) 85 Page - STMicroelectronics |
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STM32F411CE bảng dữ liệu(HTML) 85 Page - STMicroelectronics |
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85 / 149 page ![]() DocID026289 Rev 6 85/149 STM32F411xC STM32F411xE Electrical characteristics 123 Figure 24. Typical application with an 8 MHz crystal 1. REXT value depends on the crystal characteristics. Low-speed external clock generated from a crystal/ceramic resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in Table 38. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). The LSE high-power mode allows to cover a wider range of possible crystals but with a cost of higher power consumption. Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. For information about the LSE high-power mode, refer to the reference manual RM0383. Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) 1. Guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit RF Feedback resistor - - 18.4 - M Ω IDD LSE current consumption Low-power mode (default) -- 1 µA High-drive mode - - 3 Gm_crit_max Maximum critical crystal gm Startup, low-power mode - - 0.56 µA/V Startup, high-drive mode - - 1.50 tSU(LSE)(2) 2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is guaranteed by characterization. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. startup time VDD is stabilized - 2 - s |
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