Broadcom

- 6 -

ACPL-33JT

Data Sheet

Regulatory Information

Table 6 Absolute Maximum Ratings

Parameter

Symbol

Min.

Max.

Units

Note

Storage Temperature

–55

150

°C

Operating Temperature

–40

125

°C

Output IC Junction Temperature

150

°C

a

a.

Input IC power dissipation is derated linearly above 10 0°C from 15 0mW to 100 mW at 125 °C for high effective thermal conductivity

board. Output IC power dissipation is derated linearly above 100 °C from 600 mW to 350 mW at 125 °C for high effective thermal

conductivity board; see Figure 6. For power derating with low effective thermal conductivity board, see Figure 5.

Average Input Current

20

mA

Peak Transient Input Current (<1 μs

pulse width, 300pps)

1A

Reverse Input Voltage

6.0

V

b.

Absolute maximum voltage ratings imply transistor off state.

–0.5

6.0

V

Primary Gate Drive Voltageb

–0.5

V

COMP Pin Voltage b

–0.5

V

c.

Absolute maximum current ratings imply transistor on state.

I/UVLO

10

mA

/UVLO Pin Voltageb

–0.5

6.0

V

d

d.

Duration of absolute maximum voltage applied to /UVLO or /Fault pin during the internal MOS turns ON is limited to maximum 10 μs

with maximum 5% duty cycle.

/Fault Output Currentc

I/FAULT

10

mA

/Fault Pin Voltageb

–0.5

6.0

V

d

Output Supply Voltageb

–0.5

25

V

Peak Output Currentc

A

e

e.

Maximum pulse width=1 μs, maximum duty cycle=1%.

Gate Drive Output Voltage b

–0.5

V

Miller Clamping Pin Voltageb

–0.5

V

f

f.

When CLAMP pin is turned on, maximum pulse width is limited to 1 μs, maximum duty cycle=2%.

Desat Voltageb

–0.5

V

g

g.

Maximum pulse width=5 μs, maximum duty cycle=10%.

Soft Shutdown Pin Voltageb

–0.5

V

Output IC Power Dissipation

600

mW

a

Input IC Power Dissipation

150

mW

a