| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
ADA4350ARUZ-R7 bảng dữ liệu(PDF) 16 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
ADA4350ARUZ-R7 bảng dữ liệu(HTML) 16 Page - Analog Devices |
|
16 / 38 page ![]() Data Sheet ADA4350 Rev. B | Page 15 of 37 ABSOLUTE MAXIMUM RATINGS Table 10. Parameter Rating Analog Supply Voltage 14 V Digital Supply Voltage 5.5 V Power Dissipation See Figure 4 Common-Mode Input Voltage ±Vs ± 0.3V Differential Input Voltage ±0.7 V Input Current (IN-N, IN-P, VIN1, RF1, and REF) 20 mA Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 150°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. THERMAL RESISTANCE θJA is specified for the worst case conditions, that is, θJA is specified for a device soldered in a circuit board for surface- mount packages. Table 11 lists the θJA for the ADA4350. Table 11. Thermal Resistance Package Type θJA Unit 28-Lead TSSOP 72.4 °C/W MAXIMUM POWER DISSIPATION The maximum safe power dissipation for the ADA4350 is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the properties of the plastic change. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the ADA4350. Exceeding a junction temperature of 175°C for an extended period can result in changes in silicon devices, potentially causing degradation or loss of functionality. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the die due to the ADA4350 output load drive. The quiescent power dissipation is the voltage between the supply pins (±VS) multiplied by the quiescent current (IS). PD = Quiescent Power + (Total Drive Power − Load Power) ( ) L OUT L OUT S S S D R V R V V I V P 2 2 − × ± + × ± = Consider rms output voltages. If RL is referenced to −VS, as in single-supply operation, the total drive power is +VS × IOUT. If the rms signal levels are indeterminate, consider the worst case, when VOUT = +VS/4 for RL to midsupply for dual supplies and VOUT = +VS/2 for single supply. ( ) ( ) L OUT S S D R V I V P 2 + × + = Airflow increases heat dissipation, effectively reducing θJA. In addition, more metal directly in contact with the package leads and exposed pad from metal traces, through holes, ground, and power planes reduces θJA. Figure 4 shows the maximum safe power dissipation in the package vs. the ambient temperature on a JEDEC standard 4-layer board. θJA values are approximations. 0 0.5 1.0 1.5 2.0 2.5 3.0 –55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 AMBIENT TEMPERAURE (°C) 28-LEAD TSSOP TJ = 150°C Figure 4. Maximum Power Dissipation vs. Ambient Temperature for a 4-Layer Board ESD CAUTION |
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |