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BUV21 bảng dữ liệu(PDF) 3 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  SWITCHMODE Series NPN Silicon Power Transistor
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BUV21 bảng dữ liệu(HTML) 3 Page - ON Semiconductor

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Figure 2. Active Region Safe Operating Area
40
1
VCE, COLLECTOR-EMITTER VOLTAGE (V)
10
200
10
1
0.1
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. “On” Voltages
Figure 4. DC Current Gain
50
100
IC, COLLECTOR CURRENT (A)
110
40
0
30
20
10
VCE = 5 V
Figure 5. Resistive Switching Performance
3.0
0
5
10
15
25
VCE = 100 V
IC/IB1 = 8
IB1 = IB2
2.0
1.0
tS
0.4
0.3
0.2
20
ton
tF
2.0
IC, COLLECTOR CURRENT (A)
110
1.6
IC/IB = 8
0.8
1.2
0.4
Figure 6. Switching Times Test Circuit
IC, COLLECTOR CURRENT (A)
VBE
VCE
VCC
IB2
IB1
RB
RC
RC − RB: Non inductive resistances
VCC = 100 V
RC =4 W
RB = 2.2 W
10,000
mF
0



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