BUV21 datasheet(2/4 Pages) ONSEMI

2 / 4 page

BUV21

http://onsemi.com

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 1)

Collector−Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

VCEO(sus)

200

Vdc

Collector Cutoff Current at Reverse Bias:

(VCE = 250 V, VBE = −1.5 V)(TC = 25_C unless otherwise noted)

(VCE = 250 V, VBE = −1.5 V, TC = 125_C)

ICEX

3.0

12.0

mAdc

Collector−Emitter Cutoff Current

(VCE = 160 V)

ICEO

3.0

mAdc

Emitter−Base Reverse Voltage

(IE = 50 mA)

VEBO

Emitter−Cutoff Current

(VEB = 5 V)

IEBO

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

(VCE = 140 V, t = 1 s)

IS/b

0.15

Adc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 12 A, VCE = 2 V)

(IC = 25 A, VCE = 4 V)

hFE

Collector−Emitter Saturation Voltage

(IC = 12 A, IB = 1.2 A)

(IC = 25 A, IB = 3 A)

VCE(sat)

0.6

1.5

Vdc

Base−Emitter Saturation Voltage

(IC = 25 A, IB = 3 A)

VBE(sat)

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

8.0

MHz

SWITCHING CHARACTERISTICS (Resistive Load)

Turn-on Time

(IC = 25 A, IB1 = IB2 = 3 A,

VCC = 100 V, RC = 4 W)

ton

1.0

Storage Time

1.8

Fall Time

0.4

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Figure 1. Power Derating

1.0

TC, TEMPERATURE (°C)

160

200

0.4

0.8

0.6

0.2

120

BUV21 bảng dữ liệu(PDF) 2 Page - ON Semiconductor

BUV21 bảng dữ liệu(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL