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BUV21 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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BUV21 bảng dữ liệu(HTML) 1 Page - ON Semiconductor |
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1 / 4 page ![]() © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 11 1 Publication Order Number: BUV21/D BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO(SUS) 200 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 7 Vdc Collector−Emitter Voltage (VBE = −1.5 V) VCEX 250 Vdc Collector−Emitter Voltage (RBE = 100 W) VCER 240 Vdc Collector−Current − Continuous − Peak (PW v 10 ms) IC ICM 40 50 Adc Apk Base−Current Continuous IB 8 Adc Total Device Dissipation @ TC = 25_C PD 250 W Operating and Storage Junction Temperature Range TJ, Tstg −65 to 200 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 0.7 _C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS http://onsemi.com MARKING DIAGRAM Device Package Shipping ORDERING INFORMATION BUV21G TO−204 (Pb−Free) 100 Units / Tray BUV21G AYWW MEX TO−204AE (TO−3) CASE 197A STYLE 1 BUV21 = Device Code G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin BASE 1 EMITTER 2 COLLECTOR CASE NPN 1 2 |
Số phần tương tự - BUV21 |
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Mô tả tương tự - BUV21 |
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