GaN Hybrid Power Amplifier

HT0808-15A

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

1 / 8

Version 1.0

Product Features

Applications

• GaN on SiC HEMT

• 2-Stage Amplifier 50ohms Matching

• Surface Mount Hybrid Type

• Small Size & Mass

• High Efficiency

• RF Sub-Systems

• Base Station

• Repeater

• 4G/LTE system

• Small cell

Description

The HT0808-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz

This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,

High power density.

PARAMETER

UNIT

MIN

TYP

MAX

CONDITION

Frequency Range

MHz

869

-

894

ZS = ZL = 50 ohm

Power Gain

dB

34

37

39

Amp : Idq1 = 50mA

Idq2 = 105mA

Gain Flatness

-

0.6

-

Input Return Loss

-

-10

-6.0

Pout @ Average

dBm

-

33

-

Pout @ Psat

dBm

40.8

41.5

-

Pulse Width=50us, 10%Duty

ACLR @ BW 10MHz

LTE (PAPR 7.5dB)

dBc

-

-32

-27

Non DPD

-

-53

-

With DPD

Drain Efficiency

%

23

26

-

Pout @ Average

Total Ids

mA

-

280

-

Supply Voltage

V

-

-3.0

-2.0

Gate Bias (

V

-

28

-

Main Bias(Vds)

Caution

The drain voltage must be supplied to the device after the gate voltage is supplied

Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies

Turn off : Turn off the Drain Voltage and last turn off the Gate voltage

Note

1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz

LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)

2. HT Series have internal DC blocking capacitors at the RF input and output ports

Mechanical Specifications

PARAMETER

UNIT

TYP

REMARK

Mass

g

2

-

Dimension

㎜

20.5 x 15 x 3.5

-

Package Type : NP-1EL