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CHR3763-QDG bảng dữ liệu(PDF) 2 Page - United Monolithic Semiconductors |
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CHR3763-QDG bảng dữ liệu(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 16 page ![]() CHR3763-QDG 12-16GHz Integrated Down Converter Ref. : DSCHR3763-QDG3324 - 20 Nov 13 2/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Electrical Characteristics Tamb.= +25°C, VD1= VD2= VD3 = +3.0V (1) Symbol Parameter Min Typ Max Unit FRF RF Frequency range 12 16 GHz FLO LO frequency range 8.5 19.5 GHz FIF IF frequency range DC 3.5 GHz G Conversion gain (2) 12 dB NF Noise Figure 2.3 dB Im_rej Image rejection (2) 20 dBc PLO LO Input power 5 dBm IIP3 Input IP3 0 dBm LO RL LO return loss 12 dB RF RL RF return loss 10 dB VDx DC drain voltage (1) 3 V VG1 1st stage LNA DC gate voltage -0.52 V VG2 2nd stage LNA DC gate voltage -0.46 V VG3 LO buffer DC gate voltage -0.46 V VG4 Mixer DC gate voltage -1 V Id Total drain current (ID1+ID2+ID3) (3) 80 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". (1) VD1: 1st stage LNA drain bias voltage. VD2: 2nd stage LNA drain bias voltage. (1) VD3: LO-chain drain bias voltage. (2) An external combiner 90° is required on I / Q. (3) ID1: 1st stage LNA drain current, typically 14mA, should be tuned with VG1. (3) ID2: 2nd stage LNA drain current, typically 31mA, should be tuned with VG2. (3) ID3: LO-chain drain current, typically 35mA, should be tuned with VG3. Electrostatic discharge sensitive device observe handling precautions! |
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