TMS570LS1114 datasheet(77/169 Pages) TI1

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TMS570LS1114

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SPNS188B – OCTOBER 2012 – REVISED FEBRUARY 2015

6.10.5 Program Flash

Table 6-23. Timing Requirements for Program Flash

Parameter

MIN

NOM

MAX

Unit

tprog(144bit)

Wide Word (144bit) programming time

300

µs

tprog(Total)

1MByte programming time(1)

-40°C to 125°C

0°C to 60°C, for first

2.8

5.5

25 cycles

terase(bank0)

Sector/Bank erase time(2)

-40°C to 125°C

0.03

0°C to 60°C, for first

100

25 cycles

twec

Write/erase cycles with 15 year Data Retention

-40°C to 125°C

1000

cycles

requirement

(1)

This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes

programming 144 bits at a time at the maximum specified operating frequency.

(2)

During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase

a sector.

6.10.6 Data Flash

Table 6-24. Timing Requirements for Data Flash

Parameter

MIN

NOM

MAX

Unit

tprog(144bit)

Wide Word (144bit) programming time

300

µs

tprog(Total)

EEPROM Emulation (bank 7) 64KByte

-40°C to 125°C

660

programming time(1)

0°C to 60°C, for first

165

330

25 cycles

terase(bank7)

EEPROM Emulation (bank 7) Sector/Bank

-40°C to 125°C

0.2

erase time (2)

0°C to 60°C, for first

100

25 cycles

twec

Write/erase cycles with 15 year Data Retention

-40°C to 125°C

100000

cycles

requirement

(1)

This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes

programming 144 bits at a time at the maximum specified operating frequency.

(2)

During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase

a sector.

System Information and Electrical Specifications

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