TMS28F008ASB datasheet(27/52 Pages) TI1

27 / 52 page

TMS28F008Axy,TMS28F800Axy

1048576 BY 8BIT/524288 BY 16BIT

AUTOSELECT BOOT BLOCK FLASH MEMORIES

SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

recommended operating conditions

MIN

NOM

MAX

UNIT

3 VCC

2.7

3.6

VCC

Supply voltage

During write/read/erase/erase suspend

3.3 VCC

3.3

3.6

VCC

Supply voltage

During write/read/erase/erase suspend

5 VCC

4.5

5.5

During read only (VPPL)

6.5

VPP

Supply voltage

During write/erase/erase suspend, VPP can have VCC

3 VPP

3.0

3.3

3.6

VPP

Supply voltage

During write/erase/erase suspend, VPP can have VCC

as MIN or NOM

5 VPP

4.5

5.5

as MIN or NOM

12 VPP

11.4

12.6

VIH

High-level dc input voltage

TTL

VCC + 0.5

VIH

High-level dc input voltage

CMOS

VCC − 0.2

VCC + 0.2

VIL

Low-level dc input voltage

TTL

− 0.5

0.8

VIL

Low-level dc input voltage

CMOS

VSS − 0.2

VSS + 0.2

VLKO

VCC lock-out voltage from write/erase (see Note 7)

1.2

VHH

RP unlock voltage

11.4

VPPLK VPP lock-out voltage from write/erase (see Note 7)

1.5

Ambient temperature during read/erase/program:

L Suffix

°C

Ambient temperature during read/erase/program:

E Suffix

−40

°C

NOTE 7: Typical values shown are at TA = 25°C.

word/byte typical write and block-erase performance (see Notes 7 and 8)

MIN

TYP

MAX

UNIT

Main-block erase time

2.4

Main-block byte-program time

1.7

Main-block word-program time

1.1

Parameter/ boot-block erase time

0.84

NOTES:

7. Typical values shown are at TA = 25°C.

8. Excludes system-level overhead (all times in seconds)

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