THS1041CPWR datasheet(32/42 Pages) TI1

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THS1041

SLAS289C − OCTOBER 2001 − REVISED OCTOBER 2004

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APPLICATION INFORMATION

steady-state clamp voltage error (continued)

COS

VDROOP = ∆VAIN

V(Clamp)

VAIN

Figure 47. Approximate Waveforms at AIN During Droop and Clamping

The voltage change at AIN during acquisition has been approximated as a linear charging ramp by assuming

that almost all of VCOS appears across RIN, giving a charging current VCOS/RIN (this is a reasonable

approximation when VCOS is large enough to be of concern). The voltage change at AIN during clamp

acquisition is then:

AIN +

COS

The peak-to-peak voltage variation at AIN must equal the clamp droop voltage at steady state. Equating the

droop voltage to the clamp acquisition voltage change gives:

COS +

Thus for low offset voltage, keep RIN low, design for low droop and ensure that the ratio td/tc is not unreasonably

large.

reference decoupling

VREF pin

When the on-chip reference generator is enabled, the VREF pin should be decoupled to the circuit board’s

analog ground plane close to the THS1041 AGND pin via a 1-

µF capacitor and a 0.1-µF ceramic capacitor.

REFT and REFB pins

In any mode of operation, the REFT and REFB pins should be decoupled as shown in Figure 48. Use short

board traces between the THS1041 and the capacitors to minimize parasitic inductance.

THS1041

REFT

REFB

0.1

µF

0.1

µF

0.1

µF

Figure 48. Recommended Decoupling for the ADC Reference Pins REFT and REFB

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