LM5160APWPR datasheet(6/28 Pages) TI1

6 / 28 page

LM5160A, LM5160

SNVSA03C – OCTOBER 2014 – REVISED AUGUST 2016

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Product Folder Links: LM5160A LM5160

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(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report.

6.4 Thermal Information

(1)

THERMAL METRIC

LM5160, LM5160A

UNIT

DNT (WSON)

12 PINS

RθJA

Junction-to-ambient thermal resistance(1)

33.4

°C/W

RθJCbot

Junction-to-case (bottom) thermal resistance (1)

1.9

°C/W

ψJB

Junction-to-board thermal characteristic parameter

11.3

°C/W

RθJB

Junction-to-board thermal resistance

11.1

°C/W

RθJCtop

Junction-to-case (top) thermal resistance

24.7

°C/W

ψJT

Junction-to-top thermal characteristic parameter

0.2

°C/W

6.5 Electrical Characteristics

Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over TJ = –40°C to 125°C

(1)(2) for the LM5160,

LM5160A . Unless otherwise stated, VIN = 24 V.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

ISD

Input shutdown current

VIN = 24 V, EN/UVLO = 0 V

90.7

µA

IOP

Input operating current

VIN = 24 V, FB = 3 V, non-switching

2.3

2.84

VCC SUPPLY

VCC

Bias regulator output

VIN = 24 V, ICC = 20 mA

6.47

7.5

8.52

VCC

Bias regulator current limit

VIN = 24 V

VCC(UV)

VCC undervoltage threshold

VCC rising

3.98

4.1

VCC(HYS)

VCC undervoltage hysteresis

VCC falling

185

VCC(LDO)

VIN – VCC dropout voltage

VIN = 4.5 V, ICC = 20 mA

165

260

HIGH-SIDE FET

RDS(ON)

High-side ON-resistance

V(BST - SW) = 7 V, ISW = 1 A

0.29

BST(UV)

Bootstrap gate drive UV

V(BST - SW) rising

2.93

3.6

BST(HYS)

Gate drive UV hysteresis

V(BST - SW) falling

200

LOW-SIDE FET

RDS(ON)

Low-side ON-resistance

ISW = 1 A

0.13

HIGH-SIDE CURRENT LIMIT

ILIM (HS)

High-side current limit threshold

2.125

2.5

2.875

TRES

Current limit response time

ILIM (HS) threshold detect to FET turnoff

100

TOFF1

Current limit forced OFF-time

FB = 0 V, VIN = 65 V

17.31

39.8

µs

TOFF2

Current limit forced OFF-time

FB = 1 V, VIN = 24 V

2.18

3.5

5.12

µs

LOW-SIDE CURRENT LIMIT

ISOURCE(LS)

Sourcing current limit

1.9

2.5

ISINK(LS)

Sinking current limit

5.4

DIODE EMULATION

VFPWM(LOW)

FPWM input logic low

VIN = 24 V

VFPWM(HIGH)

FPWM input logic high

VIN = 24 V

IZX

Zero cross detect current

FPWM = 0 (diode emulation)

REGULATION COMPARATOR

VREF

FB regulation level

VIN = 24 V (12-pin WSON)

1.977

2.017

I(Bias)

FB input bias current

VIN = 24 V

100

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