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ADC16071CIWM bảng dữ liệu(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện ADC16071CIWM
Giải thích chi tiết về linh kiện  16-Bit Delta-Sigma 192 ks/s Analog-to-Digital Converters
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ADC16071CIWM bảng dữ liệu(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1 and 2)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VAa VDa and VMa)
a
65V
Logic Control Inputs
b
03V to VDa a 03V
Voltage at Other
Inputs and Outputs
b
03V to VAa e VMa a 03V
Input Current at Any Pin (Note 3)
g
25 mA
Package Input Current (Note 3)
g
100 mA
Maximum Junction Temperature (Note 4)
150 C
Storage Temperature
b
65 Cto a150 C
Lead Temperature
N Package (Soldering 10 sec)
300 C
WM Package (Infrared 15 sec)
220 C
WM Package (Vapor Phase 60 sec)
215 C
ESD Susceptibility (Note 5)
Human Body Model
4000V
Machine Model
250V
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering sur-
face mount devices
Operating Ratings (Notes 1 and 2)
Temperature Range
(Tmin s TA s Tmax)
ADC16471CIN ADC16071CIN
b
40 C s TA s a85 C
ADC16471CIWM ADC16071CIWM
Supply Voltage
VAa VDa VMa
475V to 525V
Converter Electrical Characteristics
The following specifications apply for VMa e VAa e VDa e 50VDC VMID e VAa 2 e 250V VREFa e VMID a 125V
VREFb e VMID b 125V fCLK e 24576 MHz and dynamic tests are performed with an input signal magnitude set at b6dB
with respect to a full-scale input unless otherwise specified Boldface limits apply for TA e TJ e Tmin to Tmax all other
limits TA e TJ e 25 C
Symbol
Parameter
Conditions
Typical
Limits
Units
(Note 6)
(Note 7)
(Limit)
Resolution
16
Bits
fCLK e 24576 MHz (fs e 192 kHz)
S(NaD)
Signal-to-Noise a Distortion Ratio
Measurement bandwidth e 045fs
76
72
dB (min)
fIN e 19 kHz
THD
Total Harmonic Distortion
fIN e 19 kHz
0010
0022
% (max)
IMD
Intermodulation Distortion
f1 e 185 kHz f2 e 195 kHz
0010
0017
% (max)
Converter Noise Floor (Note 8)
Measurement Bandwidth e 045fs
b
88
b
77
dBFS (min)
fCLK e 6144 MHz (fs e 48 kHz)
S(NaD)
Signal-to-Noise a Distortion Ratio
Measurement bandwidth e 045fs
85
80
dB (min)
fIN e 5 kHz
73
dB (min)
THD
Total Harmonic Distortion
fIN e 5 kHz
0002
00055
% (max)
0008
% (max)
IMD
Intermodulation Distortion
f1 e 4 kHz f2 e 55 kHz
0003
0009
% (max)
001
% (max)
Converter Noise Floor (Note 8)
Measurement Bandwidth e 045fs
b
99
b
92
dBFS (min)
b
89
dBFS (min)
OTHER CONVERTER CHARACTERISTICS
ZIN
Input Impedance (Note 9)
34
kX
D
AV
Gain Error
g
02
g
10
%FS (max)
VOS
Input Offset Voltage
15
mV
IA
Analog Power Supply Current
23
31
mA (max)
IM
Modulator Power Supply Current
fCLK e 24576 MHz
16
24
mA (max)
fCLK e 6144 MHz
04
08
ID
Digital Power Supply Current
fCLK e 24576 MHz
50
65
mA (max)
fCLK e 6144 MHz
13
23
ISPD
Power-Down Supply Current
IA a ID a IM
025
13
mA
PD
Power Dissipation
0375
05
W
VMID
VAa 2
V
3



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