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TPD2S017DBVR bảng dữ liệu(PDF) 6 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  2-Channel Ultra-Low Clamp Voltage ESD Solution
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TPD2S017DBVR bảng dữ liệu(HTML) 6 Page - Texas Instruments

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Vcc (optional)
Ch1_In
Ch1_Out
Ch2_In
Ch2_Out
TPD2S017
TPD2S017
SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015
www.ti.com
7 Detailed Description
7.1 Overview
The TPD2S017 is a two-channel ESD protection device. The two-stage ESD diodes and 1-
Ω isolation resistor
topology of the device gives the system very robust and good protection during ESD strikes. The TPD2S017
conforms to the IEC61000-4-2 ESD protection standard. The TPD2S017 provides a –3-dB frequency at almost 3
GHz which provides enough bandwidth for a vast majority of applications. Thanks to the monolithic silicon
technology, the tight matching of the line capacitances and series resistances ensures a minimum distorted
differential signal and a high operating differential data rate. The DBV package offers a flow-through pin mapping
for ease of board layout.
7.2 Functional Block Diagram
7.3 Feature Description
Each channel of the TPD2S017 device has a topology of two-stage clamps with isolation resistor. This topology
optimizes the clamping performance while supporting a high bandwidth. Due to the low clamping voltage, the
down stream circuits that connect to the output of the channels are well-protected. The high IEC 61000-4-2 level
ensures the system's robustness during the ESD events. The good matching of the resistor and capacitance
values will yield minimal distortion of the signals. The low resistance and capacitance values make sure that this
device supports a high differential data rate. The flow-through pinout ensures no additional layout burden on the
printed circuit board (PCB).
7.4 Device Functional Modes
The TPD2S017 device stays passive and has low leakage during normal operation when the voltage at the input
of each channel is from 0 V to VCC and activates when that voltage exceeds one forward diode drop above VCC
or below ground. During IEC ESD events, contact transient voltages as high as ±11 kV can be suppressed.
When the voltages on the protected lines fall below the trigger voltage, the device reverts back to the low
leakage passive state.
6
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