TPD2S017DBVR datasheet(4/16 Pages) TI1

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TPD2S017

SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015

www.ti.com

6.4 Thermal Information

TPD2S017

THERMAL METRIC(1)

DBV (SOT-23)

UNIT

6 PINS

RθJA

Junction-to-ambient thermal resistance

192.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

166.2

°C/W

RθJB

Junction-to-board thermal resistance

39.8

°C/W

ψJT

Junction-to-top characterization parameter

44.7

°C/W

ψJB

Junction-to-board characterization parameter

39.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Series resistor

Ω

IIO

Current from I/O pins

VIO = 3 V

0.01

0.1

μA

Channel-to-channel resistance

ΔRS

VIO = 3 V

±8

±15

Ω

match

Diode forward voltage for lower

ID = 8 mA

–0.6

–0.8

–0.95

clamp

RDYN

Dynamic resistance (for I/O clamp)

I = 9 A

0.8

Ω

CIO

IO capacitance

VIO = 2.5 V; ƒ = 10 MHz

VBR

Break-down voltage

IO = 1 mA

6.6 Dissipation Ratings

TA ≤ 25°C

DERATING FACTOR(1)

TA = 70°C

PACKAGE

POWER RATING

ABOVE TA ≤ 25°C

POWER RATING

DBV

463.18 mW

–4.63 mW/C

254.75 mW

(1)

Derating factor is defined as the inverse of the traditional junction-to-ambient thermal resistance (RθJA).

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