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STM32F756VG bảng dữ liệu(PDF) 152 Page - STMicroelectronics

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STM32F756VG bảng dữ liệu(HTML) 152 Page - STMicroelectronics

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Electrical characteristics
STM32F756xx
152/228
DocID027589 Rev 4
5.3.22
Temperature sensor characteristics
5.3.23
VBAT monitoring characteristics
5.3.24
Reference voltage
The parameters given in Table 71 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 17.
Table 68. Temperature sensor characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VSENSE linearity with temperature
-
±1
±2°C
Avg_Slope(1) Average slope
-
2.5
-
mV/°C
V25(1)
Voltage at 25 °C
-
0.76
-
V
tSTART(2)
Startup time
-
6
10
µs
TS_temp(2)
ADC sampling time when reading the temperature (1 °C accuracy)
10
-
-
µs
1. Guaranteed by characterization results.
2. Guaranteed by design.
Table 69. Temperature sensor calibration values
Symbol
Parameter
Memory address
TS_CAL1
TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V
0x1FF0 F44C - 0x1FF0 F44D
TS_CAL2
TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FF0 F44E - 0x1FF0 F44F
Table 70. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 71. internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C
1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV



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