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STM32F756VG bảng dữ liệu(PDF) 149 Page - STMicroelectronics

tên linh kiện STM32F756VG
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STM32F756VG bảng dữ liệu(HTML) 149 Page - STMicroelectronics

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STM32F756xx
Electrical characteristics
196
Note:
ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 5.3.17 does not affect the ADC accuracy.
Table 65. ADC static accuracy at fADC = 36 MHz
Symbol
Parameter
Test conditions
Typ
Max(1)
1. Guaranteed by characterization results.
Unit
ET
Total unadjusted error
fADC =36 MHz,
VDDA = 2.4 to 3.6 V,
VREF = 1.7 to 3.6 V
VDDA −VREF < 1.2 V
±4
±7
LSB
EO
Offset error
±2
±3
EG
Gain error
±3
±6
ED
Differential linearity error
±2
±3
EL
Integral linearity error
±3
±6
Table 66. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ENOB
Effective number of bits
fADC =18 MHz
VDDA = VREF+= 1.7 V
Input Frequency = 20 KHz
Temperature = 25 °C
10.3
10.4
-
bits
SINAD
Signal-to-noise and distortion ratio
64
64.2
-
dB
SNR
Signal-to-noise ratio
64
65
-
THD
Total harmonic distortion
− 67
− 72
-
1. Guaranteed by characterization results.
Table 67. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ENOB
Effective number of bits
fADC =36 MHz
VDDA = VREF+ = 3.3 V
Input Frequency = 20 KHz
Temperature = 25 °C
10.6
10.8
-
bits
SINAD
Signal-to noise and distortion ratio
66
67
-
dB
SNR
Signal-to noise ratio
64
68
-
THD
Total harmonic distortion
− 70
− 72
-
1. Guaranteed by characterization results.



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