STM32F756VG datasheet(135/228 Pages) STMICROELECTRONICS

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STM32F756xx

Electrical characteristics

196

tERASE256KB Sector (256 KB) erase time

Program/erase parallelism

(PSIZE) = x 8

-2.1

Program/erase parallelism

(PSIZE) = x 16

-1.5

2.6

Program/erase parallelism

(PSIZE) = x 32

-1

tME

Mass erase time

Program/erase parallelism

(PSIZE) = x 8

-8

Program/erase parallelism

(PSIZE) = x 16

-5.6

11.2

Program/erase parallelism

(PSIZE) = x 32

-4

Vprog

Programming voltage

32-bit program operation

2.7

16-bit program operation

2.1

3.6

8-bit program operation

1.7

3.6

1. Guaranteed by characterization results.

2. The maximum programming time is measured after 100K erase operations.

Table 49. Flash memory programming with VPP

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

1. Guaranteed by design.

Unit

tprog

Double word programming

TA = 0 to +40 °C

VDD = 3.3 V

VPP = 8.5 V

-16

100(2)

2. The maximum programming time is measured after 100K erase operations.

µs

tERASE32KB Sector (32 KB) erase time

180

tERASE128KB Sector (128 KB) erase time

450

tERASE256KB Sector (256 KB) erase time

900

tME

Mass erase time

6.9

Vprog

Programming voltage

2.7

3.6

VPP

VPP voltage range

IPP

Minimum current sunk on

the VPP pin

-10

tVPP(3)

3. VPP should only be connected during programming/erasing.

Cumulative time during

which VPP is applied

hour

Table 48. Flash memory programming (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1) Unit

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