STM32F756VG datasheet(134/228 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F756xx

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DocID027589 Rev 4

Figure 37. PLL output clock waveforms in down spread mode

5.3.13

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

The devices are shipped to customers with the Flash memory erased.

Table 47. Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IDD

Supply current

Write / Erase 8-bit mode, VDD = 1.7 V

Write / Erase 16-bit mode, VDD = 2.1 V

Write / Erase 32-bit mode, VDD = 3.3 V

Table 48. Flash memory programming

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1) Unit

tprog

Word programming time

Program/erase parallelism

(PSIZE) = x 8/16/32

-16

100(2)

µs

tERASE32KB Sector (32 KB) erase time

Program/erase parallelism

(PSIZE) = x 8

400

800

Program/erase parallelism

(PSIZE) = x 16

250

600

Program/erase parallelism

(PSIZE) = x 32

200

500

tERASE128KB Sector (128 KB) erase time

Program/erase parallelism

(PSIZE) = x 8

1100

2400

Program/erase parallelism

(PSIZE) = x 16

800

1400

Program/erase parallelism

(PSIZE) = x 32

500

1100

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