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MAX2430ISE bảng dữ liệu(PDF) 6 Page - Maxim Integrated Products

tên linh kiện MAX2430ISE
Giải thích chi tiết về linh kiện  Low-Voltage, Silicon RF Power Amplifier/Predriver
PDF  10 Pages
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MAX2430ISE bảng dữ liệu(HTML) 6 Page - Maxim Integrated Products

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Low-Voltage, Silicon RF Power
Amplifier/Predriver
6
_______________________________________________________________________________________
__________Applications Information
Output Matching
The optimum internal load impedance seen by RFOUT
is approximately 15
Ω. This on-chip low drive imped-
ance provides maximum power transfer and best effi-
ciency under low (3V) supply conditions where the
voltage-swing headroom is limited. For example, driv-
ing an output power of 21.3dBm (135mW) into 50
Ω
translates to a 7.35Vp-p swing at the output. An RF
amplifier would require at least a 4.5V supply to drive a
50
Ω load directly. However, driving 21.3dBm into 15Ω
translates to 4.02Vp-p. The MAX2430 can achieve a
voltage swing of 4.02Vp-p or 2.01Vp from a 3V supply
voltage without saturating the output transistor.
Figure 1 shows the MAX2430 configured for 800MHz to
1000MHz operation. The output matching circuitry con-
verts the desired 50
Ω load impedance to the 15Ω opti-
mal load seen by the output transistor’s collector. This
configuration uses a low-loss, controlled-Q inductor net-
work. Starting from the RFOUT pin, this network consists
of a series L (which includes the 5nH package parasitic
inductance), series C, and shunt C. The design equa-
tions for this network are as follows:
R1 = Output resistance as seen by the
collector ~15
Ω
RL = Desired load resistance
The controlled-Q inductor network requires that
RL > R1 and Q >
. Choose Q and com-
pute matching components as given below:
where
ω equals the center frequency in radians/second.
Recommended starting values for L1 and L2 are given
in Table 1.
Let
A
R x R1
R1
X
Q x R1
X
X
A
X
R x R1 / A
L1 = X /
- 5nH of package
inductance
C
=
1
X
C
=
1
X
L
2
L
Co
L
Csh
L
L
O
Co
SH
Csh
=−
()
=
=−
=
ω
ω
ω
R / R1
1
L
−
()
MAX2430
OUTPUT
BIAS
GAIN
50
Ω
˜50Ω
GND2
GND3
VCC1
VCC
VCC
1nF
1nF
2.2nF
VCC2
BIAS
GND4
RFOUT
THREE-ELEMENT
MATCHING NETWORK
CO AND CSH TUNED FOR MAXIMUM POWER OUTPUT AT THE
DESIRED FREQUENCY BETWEEN 800MHz AND 1000MHz.
MAX2430IEE (PwrQSOP) UNDERSIDE METAL SLUG MUST
BE SOLDERED TO PCB GROUND PLANE.
L2 = 8nH FOR NARROW SO PACKAGE (MAX2430ISE)
L2 = 12nH FOR PwrQSOP PACKAGE (MAX2430IEE)
*
9
5nH
LC
47nH
RC
470
Ω
L2*
RF OUTPUT
CSH
CO
L1
8nH
SHDN
ON
OFF
GND1
RFIN
CIN
1nF
DRIVER
MASTER
BIAS
˜
15
Ω
RF INPUT
RL
Figure 1. Typical Application Circuit
L1(nH)
400 to 600*
22
800 to 1000
8
Table 1. Recommended L1 and L2 Starting
Values
*Not characterized
f =
ω / 2π
(MHz)
600 to 800*
15
MAX2430ISE
L2(nH)
8
12
8
MAX2430IEE
L2(nH)
12
18
12



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