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AN3161 bảng dữ liệu(PDF) 9 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Using the STGW35HF60WD advanced PT IGBT in parallel
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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AN3161 bảng dữ liệu(HTML) 9 Page - STMicroelectronics

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AN3161
The STGW35HF60WD on the test bench
Doc ID 17151 Rev 1
9/14
4
The STGW35HF60WD on the test bench
A DC-DC boost converter (Figure 5) has been used as a test vehicle to evaluate two
STGW35HF60WD IGBTs working in parallel.
Figure 5.
DC-DC boost scheme
Boost specifications:
–VIN(DC) = 250 V
–ITAV = 20 A
–VOUT = 380 V
–Fsw = 30 kHz
–
Duty = 0.33%
–
CCM operation
A preliminary analysis has been performed to measure the dynamic
∆IC established
between several couples of paralleled IGBTs. To target the best current sharing, the static
VCE(sat)(@20 A,15 V, 25 °C) has been chosen as selection criteria to split the total IGBT
population (as illustrated in Figure 6) and three sets of tests are reported in this document.
Figure 6.
VCE(sat)(@20 A, 25 °C, 15 V) grouping for the STGW35HF60WD



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