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AN2386 bảng dữ liệu(PDF) 19 Page - STMicroelectronics |
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AN2386 bảng dữ liệu(HTML) 19 Page - STMicroelectronics |
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19 / 30 page ![]() AN2386 Some considerations on VTH and TVTC equations and real examples 19/30 Figure 10. DEVICE2 TVTC - comparison between simulated and measured data Also in this new case, the data simulated and measured are quite close to each other. In this case, for DEVICE2, the threshold voltage is around 1.5V and TVTC is around 2mV/K at ambient temperature. Now it is possible to consider the DEVICE1 device and simulate the VTH and TVTC thermal behavior changing Ng, Na and tox respectively. At the beginning, the thermal behavior increasing and decreasing the gate doping concentration is simulated (see Figure 11. and Figure 12.). Figure 11. DEVICE1 VTH simulated data - comparison between different Ng Figure 12. DEVICE1 TVTC simulated data - comparison between different Ng |
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