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AN2836 bảng dữ liệu(PDF) 34 Page - STMicroelectronics |
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AN2836 bảng dữ liệu(HTML) 34 Page - STMicroelectronics |
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34 / 57 page ![]() Designing an application with L6225, L6226, L6227 AN2836 34/57 Doc ID 15084 Rev 1 4.16.1 Maximum output current vs. selectable devices Figure 39 shows a comparison of performance between different devices of the powerSPINTM family, for different packages and in a parallel configuration, with the following assumptions: ● Each equivalent full bridge drives a load ● Supply voltage: 24 V; switching frequency: 30 kHz ● Tamb = 25 °C, TJ = 125 °C ● Maximum RDS(on) (taking into account process spread) has been considered, at 125 °C ● Maximum quiescent current IQ (taking into account process spread) has been considered ● PCB is an FR4 with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm) for SO and PowerDIP packages (D, N suffixes) ● PCB is an FR4 with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm), 16 via holes and a ground layer for the PowerSO package (PD suffix) ● For each device configuration (on the x-axis) the y-axis shows the maximum output (load) current ● 2 x ‘device’ means that the two loads are driven by two equivalent full bridges obtained by paralleling two full bridges for each of the two ICs used. The current reported in Figure 39 is the maximum output current of an equivalent full bridge (a paralleled IC). Figure 38. IC dissipated power versus output current |
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