AT45DB041D datasheet(9/53 Pages) ETC2

9 / 53 page

3595T–DFLASH–8/2013

AT45DB041D

7.5

Block Erase

A block of eight pages can be erased at one time. This command is useful when large amounts

of data has to be written into the device. This will avoid using multiple Page Erase Commands.

To perform a block erase for the DataFlash standard page size (264-bytes), an opcode of 50H

must be loaded into the device, followed by three address bytes comprised of four don’t care

bits, eight page address bits (PA10 - PA3) and 12 don’t care bits. The eight page address bits

are used to specify which block of eight pages is to be erased. To perform a block erase for the

binary page size (256-bytes), the opcode 50H must be loaded into the device, followed by three

address bytes consisting of five don’t care bits, eight page address bits (A18 - A11) and 11 don’t

care bits. The nine page address bits are used to specify which block of eight pages is to be

erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected

block of eight pages. The erase operation is internally self-timed and should take place in a max-

imum time of tBE. During this time, the status register will indicate that the part is busy.

Table 7-1.

Block Erase Addressing

PA10/

A18

PA9/

A17

PA8/

A16

PA7/

A15

PA6/

A14

PA5/

A13

PA4/

A12

PA3/

A11

PA2/

A10

PA1/

PA0/

Block

00000000

00000001

00000010

00000011

•

11111100

252

11111101

253

11111110

254

11111111

255

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