JS28F640P33TF70 datasheet(14/88 Pages) NUMONYX

14 / 88 page

P33-65nm

Datasheet

Jul 2011

Order Number: 208034-04

5.0

Bus Operations

CE# low and RST# high enable device read operations. The device internally decodes

upper address inputs to determine the accessed block. ADV# low opens the internal

address latches. OE# low activates the outputs and gates selected data onto the I/O

bus.

In asynchronous mode, the address is latched when ADV# goes high or continuously

flows through if ADV# is held low. In synchronous mode, the address is latched by the

first of either the rising ADV# edge or the next valid CLK edge with ADV# low (WE#

and RST# must be VIH; CE# must be VIL).

Bus cycles to/from the P33-65nm SBC device conform to standard microprocessor bus

operations. Table 4, “Bus Operations Summary”summarizes the bus operations and the

logic levels that must be applied to the device control signal inputs.

5.1

Read

To perform a read operation, RST# and WE# must be deasserted while CE# and OE#

are asserted. CE# is the device-select control. When asserted, it enables the flash

memory device. OE# is the data-output control. When asserted, the addressed flash

memory data is driven onto the I/O bus.

5.2

Write

To perform a write operation, both CE# and WE# are asserted while RST# and OE# are

deasserted. During a write operation, address and data are latched on the rising edge

of WE# or CE#, whichever occurs first. Table 6, “Command Bus Cycles” on page 18

shows the bus cycle sequence for each of the supported device commands, while

Table 5, “Command Codes and Definitions” on page 16 describes each command. See

Section 15.0, “AC Characteristics” on page 48 for signal-timing details.

Note:

Write operations with invalid VCC and/or VPP voltages can produce spurious results and

should not be attempted.

Table 4:

Bus Operations Summary

Bus Operation

RST#

CLK

ADV#

CE#

OE#

WE#

WAIT

DQ[15:0]

Notes

Read

Asynchronous

VIH

Deasserted

Output

Synchronous

VIH

Running

Driven

Output

Write

VIH

High-Z

Input

Output Disable

VIH

High-Z

Standby

VIH

High-Z

Reset

VIL

High-Z

2,3,4

Notes:

Refer to the

Table 6, “Command Bus Cycles” on page 18 for valid DQ[15:0] during a write

operation.

X = Don’t Care (H or L).

RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current.

Recommend to set CE# and WE# to VIH on 65nm device during power-on/reset to avoid invalid commands

written into flash accidently.

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