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STM32F101ZC bảng dữ liệu(PDF) 55 Page - STMicroelectronics

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STM32F101ZC bảng dữ liệu(HTML) 55 Page - STMicroelectronics

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STM32F101xC, STM32F101xD, STM32F101xE
Electrical characteristics
Doc ID 14610 Rev 8
55/112
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 27 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
●
Stop or Standby mode: the clock source is the RC oscillator
●
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 10.
2.
Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3.
Guaranteed by design, not tested in production.
4.
Based on characterization, not tested in production.
Table 26.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = –40 to 85 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
(2)
2.
Based on characterization, not tested in production.
Frequency
30
40
60
kHz
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
µs
IDD(LSI)
(3)
LSI oscillator power consumption
0.65
1.2
µA
Table 27.
Low-power mode wakeup timings
Symbol
Parameter
Typ
Unit
tWUSLEEP
(1)
1.
The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
Wakeup from Sleep mode
1.8
µs
tWUSTOP
(1)
Wakeup from Stop mode (regulator in run mode)
3.6
µs
Wakeup from Stop mode (regulator in low-power mode)
5.4
tWUSTDBY
(1)
Wakeup from Standby mode
50
µs



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