MCP6S92 datasheet(10/40 Pages) MICROCHIP

10 / 40 page

 2004 Microchip Technology Inc.

DS21908A-page 10

MCP6S91/2/3

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF =VSS, G = +1 V/V,

Input = CH0 = (0.3V)/G, CH1 = 0.3V, RL =10kΩ to VDD/2 and CL = 60 pF.

FIGURE 2-1:

DC Gain Error, G = +1.

FIGURE 2-2:

DC Gain Error, G

≥ +2.

FIGURE 2-3:

Ladder Resistance Drift.

FIGURE 2-4:

DC Gain Drift, G = +1.

FIGURE 2-5:

DC Gain Drift, G

≥ +2.

FIGURE 2-6:

Crosstalk vs. Frequency

(circuit in Figure 6-4).

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

10%

12%

14%

16%

18%

20%

22%

24%

DC Gain Error (%)

600 Samples

G = +1

10%

12%

14%

16%

18%

DC Gain Error (%)

600 Samples

≥ +2

10%

12%

14%

16%

Ladder Resistance Drift (%/°C)

597 Samples

A = -40 to +125°C

10%

15%

20%

25%

30%

35%

DC Gain Drift (%/°C)

600 Samples

G = +1

A = -40 to +125°C

10%

12%

14%

16%

18%

20%

22%

24%

26%

DC Gain Drift (%/°C)

600 Samples

≥ +2

A = -40 to +125°C

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

1.E+05

1.E+06

1.E+07

1.E+08

Frequency (Hz)

DD = 5.0V

G = +32 V/V

CH0 selected

S = 1 kΩ

RS = 0 Ω

S = 100 Ω

RS = 10 kΩ

100k

100M

10M

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