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TLC5510AINS bảng dữ liệu(PDF) 4 Page - Texas Instruments

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tên linh kiện TLC5510AINS
Giải thích chi tiết về linh kiện  8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS
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TLC5510AINS bảng dữ liệu(HTML) 4 Page - Texas Instruments

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TLC5510, TLC5510A
8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS
SLAS095L – SEPTEMBER 1994 – REVISED JUNE 2003
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
electrical characteristics at VDD = 5 V, VREFT = 2.5 V, VREFB = 0.5 V, f(CLK) = 20 MHz, TA = 25°C (unless
otherwise noted)
digital I/O
PARAMETER
TEST CONDITIONS†
MIN
TYP
MAX
UNIT
IIH
High-level input current
VDD = MAX,
VIH = VDD
5
µA
IIL
Low-level input current
VDD = MAX,
VIL = 0
5
µA
IOH
High-level output current
OE = GND,
VDD = MIN,
VOH = VDD – 0.5 V
– 1.5
mA
IOL
Low-level output current
OE = GND,
VDD = MIN,
VOL = 0.4 V
2.5
mA
IOZH
High-level high-impedance-state
output leakage current
OE = VDD,
VDD = MAX
VOH = VDD
16
µA
IOZL
Low-level high-impedance-state
output leakage current
OE = VDD,
VDD = MIN
VOL = 0
16
µA
† Conditions marked MIN or MAX are as stated in recommended operating conditions.
power
PARAMETER
TEST CONDITIONS†
MIN
TYP
MAX
UNIT
IDD
Supply current
f(CLK) = 20 MHz, National Television System Committee (NTSC)
ramp wave input, reference resistor dissipation is separate
18
27
mA
I f
Reference voltage current
TLC5510
Vref = REFT – REFB = 2 V
5.2
7.5
10.5
mA
Iref
Reference voltage current
TLC5510A
Vref = REFT – REFB = 4 V
10.4
15
21
mA
† Conditions marked MIN or MAX are as stated in recommended operating conditions.
static performance
PARAMETER
TEST CONDITIONS†
MIN
TYP
MAX
UNIT
Self-bias (1), at REFB
Short REFB to REFBS
Short REFT to REFTS
0.57
0.61
0.65
Self-bias (2), REFT – REFB
Short REFB to REFBS,
Short REFT to REFTS
1.9
2.02
2.15
V
Self-bias (3), at REFT
Short REFB to AGND,
Short REFT to REFTS
2.18
2.29
2.4
Rref
Reference voltage resistor
Between REFT and REFB
190
270
350
Ω
Ci
Analog input capacitance
VI(ANLG) = 1.5 V + 0.07 Vrms
16
pF
TLC5510
f(CLK) = 20 MHz,
TA = 25°C
±0.4 ±0.75
Integral nonlinearity (INL)
TLC5510
(CLK)
,
VI = 0.5 V to 2.5 V
TA = – 20°C to 75°C
±1
Integral nonlinearity (INL)
TLC5510A
f(CLK) = 20 MHz,
TA = 25°C
±0.4 ±0.75
TLC5510A
(CLK)
,
VI = 0 to 4 V
TA = – 20°C to 75°C
±1
LSB
TLC5510
f(CLK) = 20 MHz,
TA = 25°C
±0.3
±0.5
LSB
Differential nonlinearity (DNL)
TLC5510
(CLK)
,
VI = 0.5 V to 2.5 V
TA = – 20°C to 75°C
±0.75
Differential nonlinearity (DNL)
TLC5510A
f(CLK) = 20 MHz,
TA = 25°C
±0.3
±0.5
TLC5510A
(CLK)
,
VI = 0 to 4 V
TA = – 20°C to 75°C
±0.75
EZS
Zero scale error
TLC5510
Vref = REFT – REFB = 2 V
– 18
– 43
– 68
mV
EZS
Zero-scale error
TLC5510A
Vref= REFT – REFB = 4 V
– 36
– 86
– 136
mV
EFS
Full-scale error
TLC5510
Vref = REFT – REFB = 2 V
– 20
0
20
mV
EFS
Full-scale error
TLC5510A
Vref = REFT – REFB = 4 V
– 40
0
40
mV
† Conditions marked MIN or MAX are as stated in recommended operating conditions.



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