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LNBH26 bảng dữ liệu(PDF) 29 Page - STMicroelectronics |
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LNBH26 bảng dữ liệu(HTML) 29 Page - STMicroelectronics |
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29 / 38 page ![]() LNBH26 Electrical characteristics Doc ID 022771 Rev 1 29/38 Symbol Parameter Test conditions Min. Typ. Max. Unit FTONE Tone frequency DSQIN=High, EXTM=0, TEN=1 20 22 24 kHz DTONE Tone duty cycle 43 50 57 % tr, tf Tone rise or fall time (2) 5 8 15 µs EffDC/DC DC-DC converter efficiency IOUT = 500 mA 93 % FSW DC-DC converter switching frequency 440 kHz UVLO Undervoltage lockout thresholds UVLO threshold rising 4.8 V UVLO threshold falling 4.7 VLP Low power diagnostic (LPD) thresholds VLP threshold rising 7.2 V VLP threshold falling 6.7 VIL DSQIN, pin logic low 0.8 V VIH DSQIN, pin logic high 2 V IIH DSQIN, pin input current VIH = 5 V 15 µA FDETIN Tone detector frequency capture range 0.4 VPP sine wave (3) 19 22 25 kHz VDETIN Tone detector input amplitude Sine wave signal, 22 kHz 0.3 1.5 VPP ZDETIN Tone detector input impedance 150 k Ω VOL DSQOUT, FLT pins logic LOW DETIN tone present, IOL = 2 mA 0.3 0.5 V VOL_BPS W BPSW pin low voltage IOL_BPSW = 5 mA DSQIN = high, EXTM = 0, TEN = 1 0.7 V IOZ DSQOUT, FLT pins leakage current DETIN tone absent, VOH = 6 V 10 µA IOBK Output backward current All VSELx = 0, VOBK = 30 V -3 -6 mA ISINK Output low-side sink current VOUT forced at VOUT_nom+0.1 V 70 mA ISINK_TIM E-OUT Low-side sink current time-out VOUT forced at VOUT_nom+0.1 V. PDO I²C bit is set to 1 after this time is elapsed. 10 ms IREV Max. reverse current VOUT forced at VOUT_nom+0.1 V, after PDO bit is set to 1 (ISINK_TIME- OUT elapsed). 2mA TSHDN Thermal shutdown threshold 150 °C ΔTSHDN Thermal shutdown hysteresis 15 °C 1. In applications where (VCC - VOUT) > 1.3 V, the increased power dissipation inside the integrated LDO must be taken into account in the application thermal management design. 2. Guaranteed by design. 3. Frequency range in which the DETIN function is guaranteed. The Vpp level is intended on the LNB bus (before the C6 capacitor. See typical application circuit for DiSEqC 2.x) IOUT from 0 to 750 mA, CBUS from 0 to 750 nF. Table 13. Electrical characteristics of section A/B (continued) |
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